Study of the energy band-gap and diffusion potential of P-N Junctions
The following studies can be carried out on any P-N Junction – Ge/Si rectifiers, LED’s base emitter /collector – base Junction of transistors (i) Reverse Saturation current I0 (ii) Temperature Coefficient of Junction Voltage dV/dt (iii) Energy Band Gap VGO (iv) Junction Capacitance Complete in all respect, including power supplies, temperature controlled oven and digital meters for measurement of current, voltage and temperature. Accessories required : CRO